STEM 1 - FEI Tecnai Osiris

• X-FEG Schottky field emitter with high brightness, oil-free pumping system,
• Analytical TWIN (A-TWIN) objective lens integrated with Super-X EDX detection system based on Silicon Drift Detector (SDD) technology,
• Gatan Ultrascan1000XP-P 2k X 2k CCD camera, HAADF, DF2, DF4, and BF STEM detectors, Gatan Enfinium SE/976 EELS spectrometer
• Fully digitized and "remote" operation to avoid vibration and temperature-variation induced by the operator,
• Fast STEM/EDX mapping, TEM tomography and 3-D reconstruction, EELS, STEM/PEELS,
• High probe currents: 0.49 nA with 0.31 nm probe and 1.51 nA with 1 nm probe at 200 kV,
• Flexible high tension: Pre-aligned at 80, 120, and 200 kV,
• TEM point-resolution/resolution-limit: 0.25 nm/ 0.14 nm, STEM resolution: 0.16 nm, EELS energy resolution: 0.9 V at optimal extractor voltage,
• Beam drift: 0.89 nm/min, Specimen drift 0.42 nm/min

Tool Specs