STEM 1 - FEI Tecnai Osiris

  • X-FEG Schottky field emitter with high brightness, oil-free pumping system,
  • Analytical TWIN (A-TWIN) objective lens integrated with Super-X EDX detection system based on Silicon Drift Detector (SDD) technology,
  • Gatan Ultrascan1000XP-P 2k X 2k CCD camera, HAADF, DF2, DF4, and BF STEM detectors, Gatan Enfinium SE/976 EELS spectrometer
  • Fully digitized and "remote" operation to avoid vibration and temperature-variation induced by the operator,
  • Fast STEM/EDX mapping, TEM tomography and 3-D reconstruction, EELS, STEM/PEELS,
  • High probe currents: 0.49 nA with 0.31 nm probe and 1.51 nA with 1 nm probe at 200 kV,
  • Flexible high tension: Pre-aligned at 80, 120, and 200 kV,
  • TEM point-resolution/resolution-limit: 0.25 nm/ 0.14 nm, STEM resolution: 0.16 nm, EELS energy resolution: 0.9 V at optimal extractor voltage,
  • Beam drift: 0.89 nm/min, Specimen drift 0.42 nm/min

Tool Specs

Manufacturer FEI
Model Osiris
Location 6120.6
Related Documents Standard Operating Procedure
Sample Preparation Guidelines
Cryo TEM Holder Guidelines