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STEM 1 - FEI Tecnai Osiris
- X-FEG Schottky field emitter with high brightness, oil-free pumping system,
- Analytical TWIN (A-TWIN) objective lens integrated with Super-X EDX detection system based on Silicon Drift Detector (SDD) technology,
- Gatan Ultrascan1000XP-P 2k X 2k CCD camera, HAADF, DF2, DF4, and BF STEM detectors, Gatan Enfinium SE/976 EELS spectrometer
- Fully digitized and "remote" operation to avoid vibration and temperature-variation induced by the operator,
- Fast STEM/EDX mapping, TEM tomography and 3-D reconstruction, EELS, STEM/PEELS,
- High probe currents: 0.49 nA with 0.31 nm probe and 1.51 nA with 1 nm probe at 200 kV,
- Flexible high tension: Pre-aligned at 80, 120, and 200 kV,
- TEM point-resolution/resolution-limit: 0.25 nm/ 0.14 nm, STEM resolution: 0.16 nm, EELS energy resolution: 0.9 V at optimal extractor voltage,
- Beam drift: 0.89 nm/min, Specimen drift 0.42 nm/min
Tool Specs
Manufacturer | FEI |
---|---|
Model | Osiris |
Location | 6120.6 |
Related Documents | Standard Operating Procedure Sample Preparation Guidelines Cryo TEM Holder Guidelines |
Contact | info@4dlabs.ca |
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