• 2 Source pulsed-DC Sputter: Al, Si
  • 4 Source RF Sputter: SiO2, TiO2, Ti, 1 source unoccupied
  • <5E-7 Torr base pressure
  • Substrate heating up to 800°C
  • Processing for 50mm, 100mm and 150mm wafers

Tool Specs

Manufacturer Kurt J Lesker
Typical Application Oxide deposition
Location 6060.8
Related Documents

Standard Operating Procedure

Training Contact info@4dlabs.ca