PVD 4

• 2 Source pulsed-DC Sputter: Al, Si
  
• 4 Source RF Sputter: SiO2, TiO2, Ti, 1 source unoccupied
• <5E-7 Torr base pressure
  
• Substrate heating up to 800°C
  
• Processing for 50mm, 100mm and 150mm wafers

Tool Specs