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PVD 4
- 2 Source pulsed-DC Sputter: Al, Si
- 4 Source RF Sputter: SiO2, TiO2, Ti, 1 source unoccupied
- <5E-7 Torr base pressure
- Substrate heating up to 800°C
- Processing for 50mm, 100mm and 150mm wafers
Tool Specs
Manufacturer | Kurt J Lesker |
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Typical Application | Oxide deposition |
Location | 6060.8 |
Related Documents | |
Training Contact | info@4dlabs.ca |
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