Electron beam lithography

- minimum feature size: 20 nm
- beam energy: 100 eV – 30 keV
- thermal field emission source
- laser-interferometer controlled stage with 2 nm precision
- small pieces up to 100 mm wafers
- load lock for faster sample loading
- laser height sensing for focus correction


Tool Specs

Manufacturer Raith
Model e_LiNE
Typical Application Electron beam lithography
Location 6060.17
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